NTE5426 Silicon Controlled Rectifier (SCR) Sensitive Gate
Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off-state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, TC = +110C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V Repetitive Peak Reverse Voltage (Gate Open, TC = +110C), VRRM . . . . . . . . . . . . . . . . . . . . . . 400V RMS On-State Current (TC = +80C, 180 Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non-Repetitive) On-State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . . 80A Peak Gate-Trigger Current (3s max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT = IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0C/W Electrical Characteristics: (TC = +25C and "Maximum Ratings" unless otherwise specified)
Parameter Peak Off-State Current Maximum On-State Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Turn-On Time Critical Rate of Rise of Off-State Voltage Symbol IDRM, IRRM VTM IGT VGT IH tgt critical dv/dt Test Conditions Rated VDRM or VRRM, TC = +110C, RG - K = 1k IT = Rated Amps Anode Voltage = 12V, RL = 60 Anode Voltage = 12V, RL = 60 Gate Open, RG - K = 1k (td + tr) IGT = 150mA Gate Open, TC = +110C, RG - K = 1k Min - - - - - - - Typ - - - - - - 8 Max 0.1 2.0 200 0.8 3.0 2.5 - Unit mA V A V mA s V/s
.420 (10.67) Max .110 (2.79)
Isol .147 (3.75) Dia Max .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode
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